Thermal spike analysis of ion-induced tracks in semiconductors

被引：23

作者：

Szenes, G. ^{[1
]}

机构：

[1] Eotvos Lorand Univ, Dept Mat Phys, H-1518 Budapest, Hungary

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2011年 / 269卷 / 19期

关键词：

Swift ions; Tracks; Thermal spike; Semiconductors; Velocity effect; Coulomb explosion; AMORPHOUS TRACKS; LATENT TRACKS; HEAVY-IONS; IRRADIATION; FULLERENES; EVOLUTION; CRYSTALS; TEO2; GES;

D O I：

10.1016/j.nimb.2011.06.014

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Track data reported in InP and GaAs are analyzed according to the analytical thermal spike model (ATSM) and good agreement with the predictions is found. The Gaussian width of the thermal spike is a(0) approximate to 11 nm compared to a(0) = 4.5 nm in insulators. When the ion velocity v(p) is high (E > 8 MeV/nucleon), a similar fraction of the electronic stopping power S-e is transformed into thermal energy of the spike in insulators and semiconductors. The results show that - compared to insulators - vp affects only slightly the track sizes in semiconductors, which is explained qualitatively by the Coulomb explosion mechanism. The reported correlation between the bandgap energy E-g and a(0) is completed with new data. The results of previous analyses of ion-induced tracks in InP by ATSM are discussed. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：2075 / 2079

页数：5

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