Generalized infrared ellipsometry study of thin epitaxial AlN layers with complex strain behavior

被引：4

作者：

Darakchieva, V ^{[1
]}

Schubert, M

Birch, J

Kasic, A

Tungasmita, S

Paskova, T

Monemar, B

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, IFM, S-58183 Linkoping, Sweden

[2] Iniversitat Leipzig, Fak Phys & Geowissensch, D-04103 Leipzig, Germany

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 340卷

关键词：

AlN; phonons; strain; infrared ellipsometry;

D O I：

10.1016/j.physb.2003.09.059

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of film thickness on the strain and structural properties of thin epitaxial AlN films has been investigated, and a sub-layer model of the degree of strain and related defects for all films is suggested. The vibrational properties of the films have been studied by generalized infrared spectroscopic ellipsometry. The proposed sub-layer model has been successfully applied to the analysis of the ellipsometry data trough model calculations of the infrared dielectric function. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：416 / 420

页数：5

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