SnSe:Kx intermetallic thermoelectric polycrystals prepared by arc-melting

被引:6
作者
Gainza, Javier [1 ]
Molto, Sergio [1 ]
Serrano-Sanchez, Federico [1 ]
Dura, Oscar J. [2 ]
Fernandez-Diaz, Maria Teresa [3 ]
Biskup, Neven [4 ,5 ]
Martinez, Jose Luis [1 ]
Antonio Alonso, Jose [1 ]
Nemes, Norbert M. [1 ,4 ]
机构
[1] Inst Ciencia Mat Madrid ICMM, CSIC, Calle Sor Juana Ines La Cruz 3, Madrid 28049, Spain
[2] Univ Castilla La Mancha, Dept Fis Aplicada, Ciudad Real 13071, Spain
[3] Inst Laue Langevin, BP 156, F-38042 Grenoble 9, France
[4] Univ Complutense Madrid, Dept Fis Mat, GFMC, Madrid 28040, Spain
[5] Univ Complutense Madrid, Inst Pluridisciplinar, Madrid 28040, Spain
关键词
LOW THERMAL-CONDUCTIVITY; TRANSPORT-PROPERTIES; PERFORMANCE; SKUTTERUDITES; ELECTRON; IMPACT; FIGURE; CHARGE; MERIT; PBTE;
D O I
10.1007/s10853-021-06864-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Neutron powder diffraction and thermoelectric characterization of SnSe:K-x intermetallic alloys are presented. Nanostructured ingots were prepared by arc-melting elemental tin and selenium along with potassium hydride. Up to x = 0.1 of K can be incorporated into SnSe. Rietveld refinement of the diffractograms locates potassium on the Sn site in the high-temperature Cmcm structure. However, in the low-temperature Pnma structure, K cannot be localized by difference Fourier maps, indicating the incorporation of K in a disordered form in the interlayer space. STEM-EELS indicates the incorporation of K into the SnSe grains. The resistivity upon K-doping at intermediate temperatures decreases by 1-2 orders of magnitude, but at high temperature is higher than the undoped SnSe. The Seebeck coefficient of K-doped SnSe remains p-type and almost temperature independent (400 mu V/K for x = 0.1). The ultralow thermal conductivity of undoped SnSe decreases further upon K-doping to below 0.3 W/m K.
引用
收藏
页码:8489 / 8503
页数:15
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