SiC and carbon nanotube distinctive effects on the superconducting properties of bulk MgB2

被引:56
作者
Serrano, G. [1 ]
Serquis, A. [1 ]
Dou, S. X. [2 ]
Soltanian, S. [2 ]
Civale, L. [3 ]
Maiorov, B. [3 ]
Holesinger, T. G. [3 ]
Balakirev, F. [4 ]
Jaime, M. [4 ]
机构
[1] Ctr Atom Bariloche CONICET, Inst Balseiro, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina
[2] Univ Wollongong, Inst Superconducting & Elect Mat, Wollongong, NSW 2522, Australia
[3] Los Alamos Natl Lab, Superconduct Technol Ctr, Los Alamos, NM 87545 USA
[4] Los Alamos Natl Lab, Natl High Magnet Field Lab, Los Alamos, NM 87545 USA
基金
美国国家科学基金会; 澳大利亚研究理事会;
关键词
D O I
10.1063/1.2832463
中图分类号
O59 [应用物理学];
学科分类号
摘要
This work describes in detail the simultaneous enhancement of the upper critical field (H-c2) and the critical current density (J(c)) of MgB2 bulk samples doped with nano-SiC particles, as well as single-walled and double-walled (dw) carbon nanotubes (CNTs). The magnetization properties were examined in a superconducting quantum interference device magnetometer, and four-probe transport measurements were performed using a 50 T pulsed magnet to determine H-c2(T). We found that the J(c) enhancement is similar in all doped samples at 5 K but nano-SiC addition is more effective to improve the flux pinning in the high temperature range (T >= 20 K); this improvement cannot solely be attributed to the C incorporation to the lattice but also to the presence of other types of defects (i.e., several kinds of nanoinclusions). CNTs produce a better C incorporation that is more effective to enhance H-c2 [i.e., dwCNT-doped samples reached a record H-c2(0)similar to 44 T value for bulk MgB2]. All the H-c2(T) curves obtained for different types of doping can be successfully described using a model for a two-gap superconductor in the dirty limit. (C) 2008 American Institute of Physics.
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页数:5
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