Spin-polarized light-emitting diodes with Mn-doped InAs quantum dot nanomagnets as a spin aligner

被引：45

作者：

Chakrabarti, S

Holub, MA

Bhattacharya, P ^{[1
]}

Mishima, TD

Santos, MB

Johnson, MB

Blom, DA

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Univ Oklahoma, Dept Phys & Astron, Norman, OK 73019 USA

[3] Univ Oklahoma, Ctr Semicond Phys Nanostruct, Norman, OK 73019 USA

[4] Oak Ridge Natl Lab, Met & Ceram Div, Oak Ridge, TN 37831 USA

来源：

NANO LETTERS | 2005年 / 5卷 / 02期

关键词：

D O I：

10.1021/nl048613n

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We have fabricated and characterized surface-emitting, spin-polarized light-emitting diodes with a Mn-doped InAs dilute magnetic quantum dot spin-injector and contact region grown by low-temperature molecular beam epitaxy, and an In0.4Ga0.6As quantum dot active region. Energy-dispersive X-ray and electron energy loss spectroscopies performed on individual dots indicate that the Mn atoms incorporate within the dots themselves. Circularly polarized light is observed up to 160 K with a maximum degree of circular polarization of 5.8% measured at 28 K, indicating high-temperature spin injection and device operation.

引用

页码：209 / 212

页数：4

共 15 条

[1]

BHATTACHARYA P, 2003, MATER RES SOC S P, V794, pT8

[2] Effect of low-temperature annealing on (Ga,Mn)As trilayer structures [J].