Direct synthesis of SiC nanowires by multiple reaction VS growth

被引：57

作者：

Du, X. W. ^{[1
]}

Zhao, X. ^{[1
]}

Jia, S. L. ^{[1
]}

Lu, Y. W. ^{[1
]}

Li, J. J. ^{[1
]}

Zhao, N. Q. ^{[1
]}

机构：

[1] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2007年 / 136卷 / 01期

基金：

中国国家自然科学基金;

关键词：

SiC; nanowires; synthesis;

D O I：

10.1016/j.mseb.2006.09.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

beta-SiC nanowires were directly synthesized by heating single-crystal silicon wafer and graphite without metal catalysts. The diameter of SiC nanowires is in the range of 10-30 nm, and the length is up to a few millimeters. Two kinds of SiC nanowires, namely pure SiC nanowires and SiC/SiO2 composite nanowires, formed at higher temperature (the holding stage) and lower temperature (the cooling stage), respectively. A multiple-reaction model was proposed to explain the formation of SiC nanowires. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：72 / 77

页数：6

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