Dislocation-impurity interaction in silicon

被引：11
作者：
Yonenaga, I [1 ]
机构：
[1] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
来源：
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY | 2004年 / 95-96卷
关键词：
dislocation-impurity interaction; generation; immobilization; mobility; Si;
D O I：
10.4028/www.scientific.net/SSP.95-96.423
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The dynamic interaction between dislocations and impurities B, P and Ge in Si with concentrations up to 2.5 x 10(20) cm(-3) is investigated by the etch-pit technique, in comparison with that 0 impurity. Dislocation generation from a surface scratch is strongly suppressed when the concentration of B and P impurities exceeds 1 x 10(19) cm(-3), originating from the immobilization by preferential impurity segregation. Dislocation velocity in motion enhances on increasing the concentration in B and P impurities. Neutral impurity Ge has weak effect on dislocation generation and velocity enhancement. Co-doping of Ge and B impurities is effective at immobilizing and retarding the velocity of dislocations in Si.
引用
收藏
页码：423 / 432
页数：10
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