Wide-bandgap GaN-based watt-class photonic-crystal lasers

被引:42
作者
Emoto, Kei [1 ,2 ]
Koizumi, Tomoaki [1 ,2 ]
Hirose, Masaki [2 ]
Jutori, Masahiro [2 ]
Inoue, Takuya [3 ]
Ishizaki, Kenji [2 ]
De Zoysa, Menaka [3 ]
Togawa, Hiroyuki [1 ]
Noda, Susumu [2 ,3 ]
机构
[1] Stanley Elect Co Ltd, Res & Dev Lab, Aoba Ku, 1-3-1 Edanishi, Yokohama, Kanagawa 2250014, Japan
[2] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan
[3] Kyoto Univ, Photon & Elect Sci & Engn Ctr PESEC, Nishikyo Ku, Kyoto 6158510, Japan
关键词
SURFACE-EMITTING LASERS; HIGH-POWER;
D O I
10.1038/s43246-022-00288-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Short-wavelength (blue-violet-to-green) lasers with high power and high beam quality are required for various applications including the machining of difficult-to-process materials and high-brightness illuminations and displays. Promising light sources for such applications are wide-bandgap GaN-based photonic-crystal surface-emitting lasers (PCSELs), which are based on two-dimensional resonance in the photonic crystal. Developments of these devices have lagged behind those of longer-wavelength GaAs-based PCSELs, because device designs for achieving robust two-dimensional resonance and a nanofabrication process that avoids introducing disorders have remained elusive for wide-bandgap GaN-based materials. Here, we address these issues and successfully realize GaN-based PCSELs with high, watt-class (>1 W) output power and a circular, single-lobed beam with a very narrow (similar to 0.2 degrees) divergence angle at blue wavelengths. In addition, we demonstrate continuous-wave operation with a high output power (similar to 320 mW) and a high beam quality (M-2 similar to 1). Our results will enable the use of GaN-based PCSELs in the above-mentioned applications.
引用
收藏
页数:8
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