Optical properties and electronic structure of V2O5, V2O3 and VO2

被引：88
作者：
Schneider, Krystyna [1 ]
机构：
[1] AGH Univ Sci & Technol, Fac Comp Sci Elect & Telecommun, Dept Elect, PL-30059 Krakow, Poland
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2020年 / 31卷 / 13期
关键词：
METAL-INSULATOR-TRANSITION; ENERGY-BAND STRUCTURE; RAY RESONANT SCATTERING; VANADIUM PENTOXIDE; REFLECTANCE SPECTRA; THIN-FILM; ABSORPTION; CONSTANTS; DIOXIDE; TEMPERATURE;
D O I：
10.1007/s10854-020-03596-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electronic structure of the three main vanadium oxides-V2O3, VO2 and V2O5-is reviewed. The optical properties of vanadium pentoxide thin films were determined. It was found that a direct allowed transition is the most probable one in the studied vanadium pentoxide thin films.
引用
收藏
页码：10478 / 10488
页数：11
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