Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphire

被引:16
|
作者
Sun, S. [4 ]
Tompa, G. S. [4 ]
Rice, C. [4 ]
Sun, X. W. [3 ]
Lee, Z. S. [1 ,2 ]
Lien, S. C. [1 ,2 ]
Huang, C. W. [1 ,2 ]
Cheng, L. C. [1 ,2 ]
Feng, Z. C. [1 ,2 ]
机构
[1] Natl Taiwan Univ, Grad Inst Electroopt Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[3] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[4] Structured Mat Ind Inc, Piscataway, NJ 08854 USA
关键词
ZnO; MOCVD; X-ray diffraction; Raman scattering; photoluminescence; synchrotron radiation;
D O I
10.1016/j.tsf.2007.07.030
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A new type of large area metal organic chemical vapor deposition (MOCVD) system for the growth of high quality and large size ZnO materials is introduced. Materials properties of the un-doped, n- and p-doped ZnO epi-films grown on sapphire substrates by this MOCVD system are studied by various techniques, including high resolution X-ray diffraction (XRD), UV-Visible optical transmission (OT), photoluminescence (PL) and photoluminescence excitation (PLE), synchrotron radiation X-ray photoelectron spectroscopy (SR-XPS). The wurtzite (w) ZnO crystal structures grown with primary (0002) orientation were identified. Results have shown the high crystalline quality of MOCVD-grown ZnO films, indicated by the narrow XRD, PL and Raman line widths, strong PL signals, sharp OT edge and smooth surface. In particular, high p-type carrier concentration of > 10(17) cm(-3) have been achieved besides the good n-type doping in ZnO. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:5571 / 5576
页数:6
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