Growth of AlPN by solid source molecular beam epitaxy

被引：2

作者：

Kawai, Tsuyoshi ^{[1
]}

Yamane, Keisuke ^{[1
]}

Furukawa, Yuzo ^{[1
]}

Okada, Hiroshi ^{[1
]}

Wakahara, Akihiro ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 | 2011年 / 8卷 / 02期

关键词：

AlPN; morphology; stacking fault; MBE; SUBSTRATE; SILICON; LAYERS; PHOTONICS; MOVPE; SI;

D O I：

10.1002/pssc.201000511

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We reported the growth of AlPN by solid source molecular beam epitaxy (MBE). N content in AlPN showed less temperature dependence than GaPN. The surface morphology degraded at lower growth temperatures even though the N contents were almost the same. A cross-sectional transmission electron microscopy (X-TEM) image revealed that the surface roughening leads to stacking faults. In the case of films grown above 600 C, atomically smooth surface was obtained. A dislocation-free AlPN layer with abrupt GaP/AlPN heterointerface was obtained (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：288 / 290

页数：3

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