Growth of AlPN by solid source molecular beam epitaxy

被引:2
作者
Kawai, Tsuyoshi [1 ]
Yamane, Keisuke [1 ]
Furukawa, Yuzo [1 ]
Okada, Hiroshi [1 ]
Wakahara, Akihiro [1 ]
机构
[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 4418580, Japan
来源
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 | 2011年 / 8卷 / 02期
关键词
AlPN; morphology; stacking fault; MBE; SUBSTRATE; SILICON; LAYERS; PHOTONICS; MOVPE; SI;
D O I
10.1002/pssc.201000511
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We reported the growth of AlPN by solid source molecular beam epitaxy (MBE). N content in AlPN showed less temperature dependence than GaPN. The surface morphology degraded at lower growth temperatures even though the N contents were almost the same. A cross-sectional transmission electron microscopy (X-TEM) image revealed that the surface roughening leads to stacking faults. In the case of films grown above 600 C, atomically smooth surface was obtained. A dislocation-free AlPN layer with abrupt GaP/AlPN heterointerface was obtained (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:288 / 290
页数:3
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