Influence of Ni doping on the electronic structure of Ni2MnGa -: art. no. 073103

被引:73
作者
Chakrabarti, A
Biswas, C
Banik, S
Dhaka, RS
Shukla, AK
Barman, SR [1 ]
机构
[1] Ctr Adv Technol, Solid State Laser Div, Indore 452013, Madhya Pradesh, India
[2] UGC, DAE, Consortium Sci Res, Indore 452017, Madhya Pradesh, India
关键词
D O I
10.1103/PhysRevB.72.073103
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The modifications in the electronic structure of Ni2+xMn1-xGa by Ni doping have been studied using the full potential linearized augmented plane wave method and ultraviolet photoemission spectroscopy. Ni 3d-related electron states appear due to formation of Ni clusters. We show the possibility of changing the minority-spin density of states (DOS) with Ni doping, while the majority-spin DOS remains almost unchanged. The total magnetic moment decreases with excess Ni. The total energy calculations corroborate the experimentally reported changes in the Curie temperature and the martensitic transition temperature with x.
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页数:4
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