Higher operating temperature photoresponse of MWIR T2SLs InAs/InAsSb photodetector

被引：3

作者：

Michalczewski, Krystian ^{[1
]}

Tsai, Tsung-Tin ^{[2
]}

Martyniuk, Piotr ^{[1
]}

Wu, Chao-Sin ^{[2
]}

机构：

[1] Mil Univ Technol, Inst Appl Phys, Urbanowicza 2 Str, PL-00908 Warsaw, Poland

[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Roosevelt Str, Taipei 10617, Taiwan

来源：

13TH CONFERENCE ON INTEGRATED OPTICS: SENSORS, SENSING STRUCTURES, AND METHODS | 2018年 / 10830卷

关键词：

HOT; MWIR T2SLs InAs/InAsSb; photoconductor;

D O I：

10.1117/12.2503766

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigate the photoresponse of mid-wavelength infrared radiation (MWIR) type-II superlattices (T2SLs) InAs/InAsSb high operating temperature (HOT) photoconductor grown on GaAs substrate. The device consists of a 200 periods of active layer grown on GaSb buffer layer. The photoresistor reached a 50% cut-off wavelength of 5 mu m and 6 mu m at 200 K and 300 K respectively. The time constant of 30 ns is observed at 200 K under 0.5 V bias. This is the first observation of the photoresponse in MWIR T2SLs InAs/InAsSb photocondotocr above 200 K.

引用

页数：6

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