Crystallographic etching of few-layer graphene

被引：466
|
作者：
Datta, Sujit S. [1 ]
Strachan, Douglas R. [1 ,2 ]
Khamis, Samuel M. [1 ]
Johnson, A. T. Charlie [1 ,2 ]
机构：
[1] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA
[2] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
来源：
NANO LETTERS | 2008年 / 8卷 / 07期
关键词：
D O I：
10.1021/nl080583r
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (> 1 mu m) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.
引用
收藏
页码：1912 / 1915
页数：4
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