Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

被引:113
作者
Schlager, John B. [1 ]
Bertness, Kris A. [1 ]
Blanchard, Paul T. [1 ]
Robins, Lawrence H. [1 ]
Roshko, Alexana [1 ]
Sanford, Norman A. [1 ]
机构
[1] Natl Inst Stand & Technol, Boulder, CO 80305 USA
关键词
D O I
10.1063/1.2940732
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report steady-state and time-resolved photoluminescence (TRPL) measurements on individual GaN nanowires (6-20 mu m in length, 30-940 nm in diameter) grown by a nitrogen-plasma-assisted, catalyst-free molecular-beam epitaxy on Si(111) and dispersed onto fused quartz substrates. Induced tensile strain for nanowires bonded to fused silica and compressive strain for nanowires coated with atomic-layer-deposition alumina led to redshifts and blueshifts of the dominant steady-state PL emission peak, respectively. Unperturbed nanowires exhibited spectra associated with high-quality, strain-free material. The TRPL lifetimes, which were similar for both relaxed and strained nanowires of similar size, ranged from 200 ps to over 2 ns, compared well with those of low-defect bulk GaN, and depended linearly on nanowire diameter. The diameter-dependent lifetimes yielded a room-temperature surface recombination velocity S of 9x10(3) cm/s for our silicon-doped GaN nanowires.
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页数:6
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