Growth temperature dependence of SrTiO3 thin films by molecular beam epitaxy

被引：4

作者：

Bhuiyan, MNK ^{[1
]}

Kimura, H ^{[1
]}

Tambo, T ^{[1
]}

Tatsuyama, C ^{[1
]}

机构：

[1] Toyama Univ, Fac Engn, Dept Elect & Elect Engn, Toyama 9308555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 1B期

关键词：

SrTiO3 thin films; Sr deposition; Si(001) substrates; reflection high-energy electron diffraction; X-ray diffraction; atomic force microscopy; molecular beam epitaxy;

D O I：

10.1143/JJAP.44.677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of Sr deposition on the chemically formed SiO2 layer of Si(001) substrates and consequently the growth of SrTiO3 thin films on the Si(001)-Sr(2 x 1) surface have been studied using reflection high-energy electron diffraction (RHEED), Xray diffraction and atomic force microscopy. After Sr deposition on the chemically formed SiO2/Si surface, a stable and well ordered Si(001)-Sr(2 x 1) surface is formed. The SrTiO3 film grown on the reconstructed Si(001)-Sr(2 x 1) surface at 350 degrees C is amorphous. The sharp, streaky RHEED patterns and the strong STO (002) diffraction peaks and the smooth surface with root mean square roughness of approximately 4 angstrom suggest that high-quality SrTiO3 films are fabricated at temperatures (400-500 degrees C) using molecular oxygen in molecular beam epitaxy.

引用

页码：677 / 680

页数：4

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