Direct oxidation growth of CuO nanowires from copper-containing substrates

被引：53

作者：

Hansen, Benjamin J. ^{[1
]}

Lu, Ganhua ^{[1
]}

Chen, Junhong ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Mech Engn, Milwaukee, WI 53211 USA

来源：

JOURNAL OF NANOMATERIALS | 2008年 / 2008卷

基金：

美国国家科学基金会;

关键词：

D O I：

10.1155/2008/830474

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Controlling the growth of semiconducting nanowires with desired properties on a reproducible basis is of particular importance in realizing the next-generation electronic and optoelectronic devices. Here, we investigate the growth of cupric oxide (CuO) nanowires by direct oxidation of copper-containing substrates at 500 degrees C for 150 minutes at various oxygen partial pressures. The substrates considered include a low-purity copper gasket, a high-purity copper foil, compacted CuO and Cu2O thin layers, and layered Cu/CuO and Cu/Cu2O substrates. The morphology, composition, and structure of the product CuO nanowires were analyzed using scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy, selected area electron diffraction, X-ray diffraction, and UV-Visible absorption. Selected oxidation processes have been monitored using a thermogravimetric analyzer. The layering structure of the substrate after oxidation was analyzed to elucidate the growth mechanism of CuO nanowires. Copyright (C) 2008 Benjamin J. Hansen et al.

引用

页数：7

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