Temperature-Induced Four-Fold-on-Six-Fold Symmetric Heteroepitaxy, Rocksalt SmN on Hexagonal AIN

被引:9
作者
Chan, Jay R. [1 ]
Vezian, Stephane [2 ]
Trodahl, Joe [1 ]
Al Khalfioui, Mohamed [2 ,3 ]
Damilano, Benjamin [2 ]
Natali, Franck [1 ]
机构
[1] Victoria Univ Wellington, Sch Chem & Phys Sci, MacDiarmid Inst Adv Mat & Nanotechnol, POB 600, Wellington 6140, New Zealand
[2] CNRS, CRHEA, Rue Bernard Gregory, F-06560 Valbonne, France
[3] Univ Nice Sophia Antipolis, Parc Valrose, F-06102 Nice 2, France
关键词
GROWTH; ORIENTATION; FILMS; GAN; EPITAXY; GDN;
D O I
10.1021/acs.cgd.6b01133
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report on the occurrence of rotational domains involving 4-fold symmetric epitaxy on a hexagonal net, a rare case in the literature. A temperature-driven crossover from fully (111)- to (001)-oriented samarium nitride grown by molecular beam epitaxy on hexagonal (0001) aluminum nitride is observed by means of in situ reflection high energy electron diffraction, scanning tunnelling microscopy studies, and ex situ X-ray diffraction. Using an especially rich set of growth conditions and nitrogen precursors, we observe the key role played by the growth kinetics, with a strong thermal cracking of the ammonia source and a re-evaporation of Sm adatoms occurring in the same temperature range of the orientation crossover.
引用
收藏
页码:6454 / 6460
页数:7
相关论文
共 33 条
  • [1] Change of growth orientation in Pt films epitaxially grown on MgO(001) substrates by sputtering
    Ahn, KH
    Baik, S
    Kim, SS
    [J]. JOURNAL OF MATERIALS RESEARCH, 2002, 17 (09) : 2334 - 2338
  • [2] Superconductivity in the ferromagnetic semiconductor samarium nitride
    Anton, E. -M.
    Granville, S.
    Engel, A.
    Chong, S. V.
    Governale, M.
    Zulicke, U.
    Moghaddam, A. G.
    Trodahl, H. J.
    Natali, F.
    Vezian, S.
    Ruck, B. J.
    [J]. PHYSICAL REVIEW B, 2016, 94 (02)
  • [3] Spin/orbit moment imbalance in the near-zero moment ferromagnetic semiconductor SmN
    Anton, Eva-Maria
    Ruck, B. J.
    Meyer, C.
    Natali, F.
    Warring, Harry
    Wilhelm, Fabrice
    Rogalev, A.
    Antonov, V. N.
    Trodahl, H. J.
    [J]. PHYSICAL REVIEW B, 2013, 87 (13)
  • [4] Braun Wolfgang., 1999, APPL RHEED REFLECTIO, V154
  • [5] Misfit accommodation mechanism at the heterointerface between diamond and cubic boron nitride
    Chen, Chunlin
    Wang, Zhongchang
    Kato, Takeharu
    Shibata, Naoya
    Taniguchi, Takashi
    Ikuhara, Yuichi
    [J]. NATURE COMMUNICATIONS, 2015, 6
  • [6] Epitaxy of GaN on silicon-impact of symmetry and surface reconstruction
    Dadgar, A.
    Schulze, F.
    Wienecke, M.
    Gadanecz, A.
    Blaesing, J.
    Veit, P.
    Hempel, T.
    Diez, A.
    Christen, J.
    Krost, A.
    [J]. NEW JOURNAL OF PHYSICS, 2007, 9
  • [7] Interfacial Octahedral Rotation Mismatch Control of the Symmetry and Properties of SrRuO3
    Gao, Ran
    Dong, Yongqi
    Xu, Han
    Zhou, Hua
    Yuan, Yakun
    Gopalan, Venkatraman
    Gao, Chen
    Fong, Dillon D.
    Chen, Zuhuang
    Luo, Zhenlin
    Martin, Lane W.
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (23) : 14871 - 14878
  • [8] Formation of epitaxial domains: Unified theory and survey of experimental results
    Grundmann, Marius
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (04): : 805 - 824
  • [9] Occurrence of Rotation Domains in Heteroepitaxy
    Grundmann, Marius
    Boentgen, Tammo
    Lorenz, Michael
    [J]. PHYSICAL REVIEW LETTERS, 2010, 105 (14)
  • [10] Tuning the Growth Orientation of Epitaxial Films by Interface Chemistry
    Gubo, Matthias
    Ebensperger, Christina
    Meyer, Wolfgang
    Hammer, Lutz
    Heinz, Klaus
    Mittendorfer, Florian
    Redinger, Josef
    [J]. PHYSICAL REVIEW LETTERS, 2012, 108 (06)