An Analysis of Mobility Influence in Optoelectronics Parameters in an InGaN/GaN Blue LED

Simulations on mobility influence in optoelectronics parameters from an InGaN/GaN blue LED using the Nextnano++ software arepresented in this paper. These simulations were performed by changing the hole and electron mobility value for the material compounds according to experimental, theoretical, and doping-concentration data already reported in the literature. The power law mobility is used for the current calculation in the quantum drift-diffusion model. The results indicate the lower hole and electron leakage currents correspond to the lowest mobility values for the InGaN alloy, the greatest amount of recombination occurs in the extreme wells within the active layer of the LED and the stable emission is at 3.6 V with peak wavelength (lambda) over cap (LED) = 456.7 nm and full width at half maximum FWHM similar to 11.1 nm for the three mobilities. Although experimental and theoretical mobility values reach higher carrier density and recombination, the photon emission is broader and unstable. Additionally, the doping-concentration mobility results in lower wavelength shifts and narrows FWHM, making it more stable. The highest quantum efficiency achieved by doping-concentration mobility is only in the breakdown voltage (eta(d)(op)(-)(max) = 60.43%), which is the IQE value comparable to similar LEDs and is more useful for these kinds of semiconductor devices.