Growth of nonpolar m-plane GaN epitaxial film on a lattice-matched (100) β-LiGaO2 substrate by chemical vapor deposition

被引：22
作者：
Chou, Mitch M. C. [1 ]
Chen, Chenlong [1 ]
Hang, D. R. [1 ]
Yang, Wen-Ting [1 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan
来源：
THIN SOLID FILMS | 2011年 / 519卷 / 15期
关键词：
m-plane GaN; CVD; X-ray diffraction; Atomic force microscopy; Photoluminescence; BUFFER LAYER; GAMMA-LIALO2; MOVPE;
D O I：
10.1016/j.tsf.2011.01.129
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report the growth of nonpolar GaN epitaxial films on nearly lattice-matched LiGaO2 substrate by a chemical vapor deposition (CVD) method. The structural, morphological and optical properties of GaN films were investigated by X-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM), atomic force microscopy, and photoluminescence (PL) measurements. We found that growth temperature plays an important role in the preparation of pure m-plane films by CVD method. Pure m-plane GaN was achieved by optimized growth condition. Epitaxial relationship was revealed by TEM study. The PL spectrum at room temperature has a strong near-band-edge emission at 3.41 eV and a weak yellow luminescence band. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：5066 / 5069
页数：4
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