Comparison of Substrate Effects in Sapphire, Trap-Rich and High Resistivity Silicon Substrates for RF-SOI Applications

被引：0

作者：

Sekar, Vikram ^{[1
]}

Cheng, Chih-Chieh ^{[1
]}

Whatley, Richard ^{[1
]}

Zeng, Chang ^{[1
]}

Genc, Alper ^{[1
]}

Ranta, Tero ^{[1
]}

Rotella, Francis ^{[1
]}

机构：

[1] Peregrine Semicond Corp, San Diego, CA 92121 USA

来源：

2015 IEEE 15TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF) | 2015年

关键词：

RF silicon-on-insulator; trap-rich silicon; silicon-on-sapphire; resistivity; harmonics; semiconductor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper compares insertion loss, harmonics and Q-factor of sapphire, trap-rich silicon and high-resistivity silicon substrates. The concept of substrate characteristic frequency is shown to be useful metric to evaluate substrate behavior. New methods to evaluate substrate properties are introduced using open CPW stubs and parallel plate capacitors. It is demonstrated that sapphire provides the best RF performance, while trap-rich silicon offers limited but adequate performance with a resistivity around a few k Omega-cm. High-resistivity silicon provides the worst RF performance due to unmitigated parasitic conduction.

引用

页码：37 / 39

页数：3