Examination of Maskless Etching Technique Using a Localized Surface Discharge Plasma

被引：3

作者：

Hamada, Toshiyuki ^{[1
]}

Sakoda, Tatsuya ^{[2
]}

Otsubo, Masahisa ^{[2
]}

机构：

[1] Miyazaki Univ, Dept Mat & Informat, Interdisciplinary Grad Sch Agr & Engn, Miyazaki 8892192, Japan

[2] Miyazaki Univ, Dept Elect & Elect Engn, Fac Engn, Miyazaki 8892192, Japan

来源：

IEEJ TRANSACTIONS ON ELECTRICAL AND ELECTRONIC ENGINEERING | 2010年 / 5卷 / 01期

关键词：

surface discharge plasma; maskless patterning etching; silicon; silicon nitride;

D O I：

10.1002/tee.20501

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A maskless etching technique Which is useful for solar Cell manufacturing and microelectronics was examined using the localized surface discharge plasma at atmospheric pressure. Etchings were carried out on a crystalline silicon (Si) substrate and a silicon nitride (SiN) film coated on it Si substrate. Two- and three-dimensional etching profiles were investigated. Based on the results, etching rates and an etching mechanism were discussed. (C) 2010 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

引用

页码：115 / 117

页数：3

共 4 条

[1]

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[2]

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