Design and Modelling of 6T FinFET SRAM in 18nm

被引：0
|
作者：
Vijayalakshmi, V. [1 ]
Naik, B. Mohan Kumar [1 ]
机构：
[1] VTU, New Horizon Coll Engn, Dept ECE, Bangalore, Karnataka, India
来源：
PROCEEDINGS OF THE 3RD INTERNATIONAL CONFERENCE ON COMMUNICATION AND ELECTRONICS SYSTEMS (ICCES 2018) | 2018年
关键词：
SRAM; FinFET; Average Power;
D O I：
暂无
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
In this work FinFET based of 6T SRAM were designed and characterized these cells in terms of temperature and average power. This SRAMs were designed & stimulated in Cadence using 18nm FinFET technology.
引用
收藏
页码：208 / 211
页数：4
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