Spin-dependent variable range hopping and magnetoresistance in Ti1-xCoxO2 and Zn1-xCoxO magnetic semiconductor films

被引：50
|
作者：
Yan, Shi-shen [1 ]
Liu, J. P.
Mei, L. M.
Tian, Y. F.
Song, H. Q.
Chen, Y. X.
Liu, G. L.
机构：
[1] Shandong Univ, Sch Phys & Microelect, Jinan 250100, Shandong, Peoples R China
[2] Shandong Univ, Natl Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China
[3] Univ Texas, Dept Phys, Arlington, TX 76019 USA
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2006年 / 18卷 / 46期
关键词：
D O I：
10.1088/0953-8984/18/46/014
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Magnetic transport properties in Ti(1-x)CoxO(2) and Zn(1-x)CoxO magnetic semiconductors have been studied experimentally and theoretically. A linear relation of ln rho versus T-1/2 (. is sheet resistance and T is temperature), which shows different slopes and intersections at different magnetic fields, was observed experimentally in the low temperature range. The spin-dependent variable range hopping model has been proposed by taking into account the electron - electron Coulomb interaction and the spin - spin exchange interaction in the same frame, which can well describe the observed magnetic transport properties in Ti1-xCoxO2 and Zn1-xCoxO magnetic semiconductors.
引用
收藏
页码：10469 / 10480
页数：12
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