Smoothing of textured GaAs surfaces during molecular beam epitaxy growth

被引:6
|
作者
Adamcyk, M [1 ]
Ballestad, A
Pinnington, T
Tiedje, T
Davies, M
Feng, Y
机构
[1] Univ British Columbia, Dept Phys & Astron, Adv Mat & Proc Engn Lab, Vancouver, BC V6T 1Z4, Canada
[2] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T 1Z4, Canada
[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 03期
关键词
D O I
10.1116/1.591410
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The surface morphology of homoepitaxial GaAs layers grown by molecular beam epitaxy on random and periodically textured substrates has been measured by atomic force microscopy and elastic light scattering. The random texture was obtained by thermal evaporation of the surface oxide and the periodic texture consisted of one-dimensional grating patterns fabricated by holographic lithography. The time evolution of the surface morphology was simulated numerically with a nonlinear growth equation that includes deposition noise and anisotropy in the surface diffusion. The surface of the random substrate develops shallow mounds as the large amplitude initial texture smooths out, an effect that has previously been attributed to unstable growth. (C) 2000 American Vacuum Society. [S0734-211X(00)01103-3].
引用
收藏
页码:1488 / 1492
页数:5
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