Growth of Li2B4O7 single crystals by a pulling-down method

被引:4
作者
Kitagawa, T
Higuchi, M
Kodaira, K
机构
[1] Div. of Mat. Science and Engineering, Graduate School of Engineering, Hokkaido University, Kita-ku, Sapporo-shi 060, Kita-13
关键词
Li2B4O7; single crystal; pulling-down method;
D O I
10.2109/jcersj.105.616
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Bubble-free, transparent Li2B4O7 single crystals were grown by a newly developed pulling-down method, The use of a two-zone vertical furnace with a Pt-crucible realized a relatively steep temperature gradient of about 50 degrees C/cm around the growth interface and a moderate gradient of about 13 degrees C/cm below the interface, contributing to prevent grown crystals from cracking. Even at a pulling-down rate of 0.75 mm/h, which is higher than that in the Czochralski growth, the formation of bubbles was effectively suppressed at a rotation rate of 25 rpm. Any crystals grown along [110] direction involved no low-angle grain boundaries, but tu inning was occasionally recognized, The dislocation density in the initial part of the crystal growth was found to be about 5 x 10(3)/cm(2) from an etch pit pattern, while X-ray topography of a vertical cross section revealed that the number of dislocation lines decreased as the growth proceeded.
引用
收藏
页码:616 / 619
页数:4
相关论文
共 50 条
  • [1] Growth of rutile single crystals by the pulling-down method
    Higuchi, M
    Togi, T
    Kodaira, K
    JOURNAL OF CRYSTAL GROWTH, 1999, 203 (03) : 450 - 453
  • [2] Growth of undoped GaAs single crystal by pulling-down method
    Jin, Min
    Xu, Jiayue
    He, Qingbo
    Fang, Yongzheng
    Shen, Hui
    Wang, Zhanyong
    Jiang, Guojian
    OPTOELECTRONIC MATERIALS, PTS 1AND 2, 2010, 663-665 : 1213 - +
  • [3] Defects of GaAs Crystals Grown by the Pulling-Down Method
    Jin, Min
    Xu, Jiayue
    He, Qingbo
    Fang, Yongzheng
    Shen, Hui
    Jiang, Guojian
    Wang, Zhanyong
    TESTING AND EVALUATION OF INORGANIC MATERIALS I, 2011, 177 : 219 - +
  • [4] Growth of Bi12SiO20 single crystals by the pulling-down method with continuous feeding
    Maida, S
    Higuchi, M
    Kodaira, K
    JOURNAL OF CRYSTAL GROWTH, 1999, 205 (03) : 317 - 322
  • [5] Growth and luminescent properties of Li2B4O7 single crystal doped with Cu
    Bui The Huy
    Bui Minh Ly
    Vu Xuan Quang
    Huynh Ky Hanh
    Doan Phan Thao Tien
    Vinh Hao
    Tran Ngoc
    APCTP-ASEAN WORKSHOP ON ADVANCED MATERIALS SCIENCE AND NANOTECHNOLOGY (AMSN08), 2009, 187
  • [6] Influence of reducing annealing on the luminescent properties of Li2B4O7:Cu single crystals
    Holovey, V. M.
    Sidey, V. I.
    Lyamayev, V. I.
    Puga, P. P.
    JOURNAL OF LUMINESCENCE, 2007, 126 (02) : 408 - 412
  • [7] Temperature dependence features of the photoluminescence spectral distribution of Li2B4O7 and Li2B4O7:Cu
    Holovey, V. M.
    Popovych, K. P.
    Klenivskyi, M. S.
    Gomonnai, A. V.
    JOURNAL OF LUMINESCENCE, 2012, 132 (08) : 1982 - 1986
  • [8] Growth of Bi12GeO20 single crystals by the pulling-down method with a continuous powder feed system
    Ueda, T
    Higuchi, M
    Kodaira, K
    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 2001, 109 (07) : 627 - 630
  • [9] Evaluation Of kinetic parameters Of Li2b4o7:Mn single crystal
    Ekdal, E.
    Karali, T.
    Kelemen, A.
    Holovey, V.
    Ignatovych, M.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 588 : 413 - 417
  • [10] Photo-luminescence properties of Cu and Ag doped Li2B4O7 single crystals at low temperatures
    Patra, G. D.
    Tyagi, Mohit
    Desai, D. G.
    Tiwari, Babita
    Sen, Shashwati
    Gadkari, S. C.
    JOURNAL OF LUMINESCENCE, 2012, 132 (05) : 1101 - 1105