Luminescences from localized states in InGaN epilayers

被引：402

作者：

Chichibu, S

Azuhata, T

Sota, T

Nakamura, S

机构：

[1] WASEDA UNIV, DEPT ELECT ELECT & COMP ENGN, SHINJUKU KU, TOKYO 169, JAPAN

[2] NICHIA CHEM IND LTD, DEPT RES & DEV, ANAN, TOKUSHIMA 774, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 21期

关键词：

D O I：

10.1063/1.119013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped InxGa1-xN (x < 0.1) was assigned to the recombination of excitons localized at the potential minima originating from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states. (C) 1997 American Institute of Physics.

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页码：2822 / 2824

页数：3

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