Luminescences from localized states in InGaN epilayers

被引：402
作者：
Chichibu, S
Azuhata, T
Sota, T
Nakamura, S
机构：
[1] WASEDA UNIV, DEPT ELECT ELECT & COMP ENGN, SHINJUKU KU, TOKYO 169, JAPAN
[2] NICHIA CHEM IND LTD, DEPT RES & DEV, ANAN, TOKUSHIMA 774, JAPAN
来源：
APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 21期
关键词：
D O I：
10.1063/1.119013
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optical spectra of the bulk three-dimensional InGaN alloys were measured using the commercially available light-emitting diode devices and their wafers. The emission from undoped InxGa1-xN (x < 0.1) was assigned to the recombination of excitons localized at the potential minima originating from the large compositional fluctuation. The emission from heavily impurity-doped InGaN was also pointed out related to the localized states. (C) 1997 American Institute of Physics.
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收藏
页码：2822 / 2824
页数：3
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