Light-induced annealing of dangling bonds in a-Si:H

被引：12

作者：

Takeda, K

Hikita, H

Kimura, Y

Yokomichi, H

Yamaguchi, M

Morigaki, K

机构：

[1] MEIKAI UNIV, PHYS LAB, URAYASU, CHIBA 279, JAPAN

[2] TOKAI UNIV, KANAGAWA 25912, JAPAN

[3] TOYAMA PREFECTURAL UNIV, DEPT ELECT & INFORMAT, KOSUGI, TOYAMA 93903, JAPAN

[4] UNIV TOKYO, INST SOLID STATE PHYS, TOKYO 106, JAPAN

[5] HIROSHIMA INST TECHNOL, DEPT ELECT ENGN, SAEKI KU, HIROSHIMA 73151, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 3A期

关键词：

amorphous silicon; dangling bonds; light-induced creation; light-induced annealing; nonradiative recombination; hydrogen diffusion; ESR;

D O I：

10.1143/JJAP.36.991

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the kinetics of light-induced defect (dangling bond) creation and annealing processes in a-Si:H containing a large amount of hydrogen at 300 K and 77 K using the ESR technique. We have obtained direct evidence for the light-induced annealing of dangling bonds at 300 K. A model, in which nonradiative recombination of electrons and holes at hydrogen-related dangling bonds is taken into account, is presented to interpret the experimental results.

引用

页码：991 / 996

页数：6

共 50 条

[41] XPS investigation of a-Si:H thin films after light soaking
Toneva, A
Marinova, T
Krastev, V
LIGHT EMISSION FROM SILICON: PROGRESS TOWARDS SI-BASED OPTOELECTRONICS, 1999, 77 : 455 - 459
[42] Phonon generation by carrier recombination in a-Si:H
van der Voort, M
Smit, GDJ
Akimov, AV
Dijkhuis, JI
PHYSICA B, 1999, 263 : 283 - 285
[43] XPS investigation of a-Si:H thin films after light soaking
Toneva, A
Marinova, T
Krastev, V
JOURNAL OF LUMINESCENCE, 1998, 80 (1-4) : 455 - 459
[44] Spectroscopic ellipsometry study of interfaces and crystallization behavior during annealing of a-Si:H films
Losurdo, M
Roca, F
De Rosa, R
Capezzuto, P
Bruno, G
THIN SOLID FILMS, 2001, 383 (1-2) : 69 - 72
[45] Femtosecond-laser-induced-crystallization and simultaneous formation of light trapping microstructures in thin a-Si:H films
B.K. Nayak
M.C. Gupta
Applied Physics A, 2007, 89 : 663 - 666
[46] Monte Carlo calculations of hydrogen depth profiles in a-Si and a-Si:H
Horiki, H
Koyama, A
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 160 (03) : 328 - 332
[47] Effect of Al vacuum annealing prior to a-Si deposition on aluminum-induced crystallization
Tankut, Aydin
Karaman, Mehmet
Yildiz, Ilker
Canli, Sedat
Turan, Rasit
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (12): : 2702 - 2707
[48] Photoluminescence of passivated a-Si:H
Brunner, R.
Kobayashi, H.
Kucera, M.
Takahashi, M.
Rusnak, J.
Pincik, E.
THIN FILMS AND POROUS MATERIALS, 2009, 609 : 281 - 285
[49] Impact of a-Si:H hydrogen depth profiles on passivation properties in a-Si:H/c-Si heterojunctions
Schulze, T. F.
Korte, L.
Rech, B.
THIN SOLID FILMS, 2012, 520 (13) : 4439 - 4444
[50] Deep defect states in a-Si:(H,C) alloys
Lin, SY
MATERIALS CHEMISTRY AND PHYSICS, 1996, 43 (01) : 19 - 24

← 1 2 3 4 5 →