Photo-nanoimprinting using sample-on-flexible-thruster stage

被引:30
作者
Hiroshima, Hiroshi [1 ]
机构
[1] Natl Inst AIST, ASRC, MIRAI, Tsukuba, Ibaraki 3058568, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 6B期
关键词
imprint lithography; nanoimprint; photo-nanoimprint; UV nanoimprint; compliant contact mechanism; wafer warping; step-and-repeat; SOFT stage;
D O I
10.1143/JJAP.45.5602
中图分类号
O59 [应用物理学];
学科分类号
摘要
We designed a novel sample stage named sample-on-flexible-thruster (SOFT) stage, which has a unique compliant contact mechanism working on the sample side, and installed it in a full-function photo-nanoimprinter. The pressing uniformity of an imprint area using the SOFT stage was preserved with a tolerance of 1 mrad in parallelism between a mold and a wafer. Such parallelism requires no adjustment once the mold is preset to an appropriate orientation. Pressing uniformity is improved using a soft pad, which supports a wafer backside, of the SOFT stage. The built-in flexible thruster of the SOFT stage controls wafer warping precisely with a force resolution of 0.01 N And a full contact between the mold and sample accompanied by air evacuation in a warping contact sequence. The thickness uniformity of cured resin using the SOFT stage was 9.8 nm for an initial resin thickness of 160 nm. The SOFT stage enables step-and-repeat photo-nanoimprintiing for an initial resin thickness of as small as 60nm. The SOFT stage separates the compliant contact mechanism from the mold side and realizes flexible arrangements of mark detection and UV illumination on the mold side of the full-function photo-nanoimprinter.
引用
收藏
页码:5602 / 5606
页数:5
相关论文
共 12 条
[1]   Fabrication of a 50 nm half-pitch wire grid polarizer using nanoimprint lithography [J].
Ahn, SW ;
Lee, KD ;
Kim, JS ;
Kim, SH ;
Park, JD ;
Lee, SH ;
Yoon, PW .
NANOTECHNOLOGY, 2005, 16 (09) :1874-1877
[2]   Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography [J].
Austin, MD ;
Ge, HX ;
Wu, W ;
Li, MT ;
Yu, ZN ;
Wasserman, D ;
Lyon, SA ;
Chou, SY .
APPLIED PHYSICS LETTERS, 2004, 84 (26) :5299-5301
[3]   Design of orientation stages for step and flash imprint lithography [J].
Choi, BJ ;
Sreenivasan, SV ;
Johnson, S ;
Colburn, M ;
Wilson, CG .
PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY, 2001, 25 (03) :192-199
[4]   Step and flash imprint lithography for sub-100nm patterning [J].
Colburn, M ;
Grot, A ;
Amistoso, M ;
Choi, BJ ;
Bailey, T ;
Ekerdt, J ;
Sreenivasan, SV ;
Hollenhorst, S ;
Willson, CG .
EMERGING LITHOGRAPHIC TECHNOLOGIES IV, 2000, 3997 :453-457
[5]   Interferometric in situ alignment for UV-based nanoimprint [J].
Fuchs, A ;
Vratzov, B ;
Wahlbrink, T ;
Georgiev, Y ;
Kurz, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06) :3242-3245
[6]   Flow behaviour of thin polymer films used for hot embossing lithography [J].
Heyderman, LJ ;
Schift, H ;
David, C ;
Gobrecht, J ;
Schweizer, T .
MICROELECTRONIC ENGINEERING, 2000, 54 (3-4) :229-245
[7]   Elimination of pattern defects of nanoimprint under atmospheric conditions [J].
Hiroshima, H ;
Komuro, M ;
Kasahara, N ;
Kurashima, Y ;
Taniguchi, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (6B) :3849-3853
[8]  
JOHNSON KL, 1985, CONTACT MECH, pCH2
[9]   Fabrication of a 34 x 34 crossbar structure at 50 nm half-pitch by UV-based nanoimprint lithography [J].
Jung, GY ;
Ganapathiappan, S ;
Ohlberg, DAA ;
Olynick, DL ;
Chen, Y ;
Tong, WM ;
Williams, RS .
NANO LETTERS, 2004, 4 (07) :1225-1229
[10]   Effect of imprinting pressure on residual layer thickness in ultraviolet nanoimprint lithography [J].
Lee, H .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03) :1102-1106