γ-Irradiation effects on the optical properties of amorphous Ge10As30Se60 thin films

被引：19

作者：

Amin, G. A. M. ^{[1
]}

机构：

[1] Comenius Univ, Dept Expt Phys, FMFI, SK-84215 Bratislava, Slovakia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2009年 / 267卷 / 19期

关键词：

Chalcogenides; Amorphous; gamma-Irradiation; Optical properties; GLASSES; AG;

D O I：

10.1016/j.nimb.2009.07.004

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Amorphous Ge10As30Se60 thin films on glass substrates were prepared by thermal evaporation method. The effect of gamma-irradiation on the optical properties of the amorphous Ge10As30Se60 thin films was studied in the spectral range from 200 nm to 1100 nm. gamma-Radiation-induced bleaching was observed after irradiation of the samples for doses up to 50 kGy. An increase in transmission and a shift in the (transmission) absorption edge towards higher energies were observed with the irradiation dose. An increase in the optical energy gap with irradiation dose was also observed in the studied range. Photo-bleaching due to gamma-irradiation was discussed in light of the structural aspects and configurational-coordinate model for Ge-As-Se. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3333 / 3336

页数：4

共 14 条

[1] Study of gamma-radiation-induced optical effects in Ge-Se-Cd for possible industrial dosimetric applications [J].

Amin, GAM ;

Spyrou, NM .

RADIATION PHYSICS AND CHEMISTRY, 2005, 72 (04) :419-422

[2] Glassy mAS2S3•nAS2Se3 photoresist films for interference laser lithography [J].

Arsh, A ;

Klebanov, M ;

Lyubin, V ;

Shapiro, L ;

Feigel, A ;

Veinger, M ;

Sfez, B .

OPTICAL MATERIALS, 2004, 26 (03) :301-304

[3] Effect of Co60 g-irradiation on the optical properties of As-Ge-S glasses [J].

Balitska, V ;

Golovchak, R ;

Kovalskiy, A ;

Skordeva, E ;

Shpotyuk, OI .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2003, 326 :130-134

[4] Excitation of rare earth emission in chalcogenide glasses by broadband Urbach edge absorption [J].

Bishop, SG ;

Turnbull, DA ;

Aitken, BG .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :876-883

[5] 40MeV 28Si5+ ion induced blue shift in the optical band gap of amorphous Se80-xTe20Pbx thin films [J].

Kamboj, MS ;

Thangaraj, R ;

Avasthi, DK ;

Kabiraj, D .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 211 (03) :369-373

[6] Photobleaching in amorphous GeS2 thin films [J].

Liu, QM ;

Gan, FX .

MATERIALS LETTERS, 2002, 53 (06) :411-414

[7]

LUTHERDAVIES B, 2007, C LAS EL QUANT EL LA

[8] Local structure resulting from photo and thermal diffusion of Ag in Ge-Se thin films [J].

Mitkova, M ;

Kozicki, MN ;

Kim, HC ;

Alford, TL .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 :552-556

[9] LUMINESCENCE IN AMORPHOUS-SEMICONDUCTORS [J].

STREET, RA .

ADVANCES IN PHYSICS, 1976, 25 (04) :397-453

[10] CONFIGURATION-COORDINATE MODEL FOR PHOTODARKENING IN AMORPHOUS AS2S3 [J].

TANAKA, K ;

ODAJIMA, A .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1981, 46 (03) :259-268

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