Temperature dependence of photoluminescence of α-Ga2 O3 powders

被引：7

作者：

Cho, S ^{[1
]}

Lee, J ^{[1
]}

Park, IY ^{[1
]}

Kim, S ^{[1
]}

机构：

[1] Hanbat Natl Univ, Dept Mat Sci & Engn, Taejon 305719, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 08期

关键词：

gallium oxide; alpha-Ga2O3; gallium oxyhydroxide; photoluminescence;

D O I：

10.1143/JJAP.41.5237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this investigation, alpha-Ga2O3 powder is synthesized by the heat treatment of gallium oxyhydroxide (GaOOH) under O-2 and NH3 gas flow conditions, and the temperature dependence of its photoluminescence characteristics is systematically examined, for the first time. A new UV emission band with high intensity and narrow bandwidth is observed at 3.469 eV for the alpha-Ga2O3 powders synthesized in NH3. This new luminescence band thermally relaxes and decays when the temperature is higher than 130 K, which is ascribed to the radiative recombination of the shallow donor-bound excitons. These phenomena are thought to be due to the nitrogen atoms incorporated into the alpha-Ga2O3 crystal lattice from NH3 gases during the heat treatment of GaOOH.

引用

页码：5237 / 5240

页数：4

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