Chemically Amplified Photoresists for 193-Nm Photolithography: Effect of Molecular Structure and Photonic Parameters on Photopatterning

被引：14

作者：

Ridaoui, Hassan ^{[1
]}

Dirani, Ali ^{[1
]}

Soppera, Olivier ^{[1
]}

Ismailova, Esma ^{[2
]}

Brochon, Cyril ^{[3
]}

Schlatter, Guy ^{[2
]}

Hadziioannou, Georges ^{[3
]}

Tiron, Raluca ^{[4
]}

Bandelier, Philippe ^{[4
]}

Sourd, Claire ^{[4
]}

机构：

[1] Univ Haute Alsace, Dept Photochim Gen, CNRS, FRE 3252, F-68058 Mulhouse, France

[2] Univ Strasbourg, Ecole Europeenne Chim Polymeres & Mat, EAC 4379, Lab Ingn Polymeres Hautes Technol, F-67087 Strasbourg, France

[3] Univ Bordeaux 1, LCPO, CNRS, Inst Polytech Bordeaux ENSCBP,UMR5629, F-33405 Talence, France

[4] CEA, LETI, MINATEC, F-38054 Grenoble 9, France

来源：

JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY | 2010年 / 48卷 / 06期

关键词：

atomic force microscopy; atom transfer radical polymerization; chemically amplified photoresists; hyperbranched polymer; nanotechnology; photolithography; photoresists; resists; LINE EDGE ROUGHNESS; POSITIVE-TONE; POLYMERS; RESISTS; AMPLIFICATION; DISSOLUTION; MODEL;

D O I：

10.1002/pola.23866

中图分类号：

O63 [高分子化学（高聚物）];

学科分类号：

070305 ; 080501 ; 081704 ;

摘要：

Next generations of microelectronic devices request further miniaturized systems. In this context, photolithography is a key step and many efforts have been paid to develop new irradiation setup and materials compatible with sub-100 nm resolution. Among other resist platforms, chemically amplified photoresists (CAR) are widely used because of their excellent properties in terms of resolution, sensitivity, and etching resistance. However, low information on the impact of the polymer structure on the lithography performance is available. CAR with well-controlled polymer structures were thus prepared and investigated. In particular, the impact of the polymer structure on the lithographic performance was evaluated. Linear and branched polymers with various molecular weights and polyclispersities were compared. We focused on the dependency of the photosensitivity of the resist with the structural parameters. These results allow further understanding the fundamental phenomena involved by 193-nm irradiation. (C) 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 48: 1271-1277, 2010

引用

页码：1271 / 1277

页数：7