Low-Temperature Substrate Bonding Technology for High Power GaN-on-Diamond HEMTs

被引:0
作者
Chu, Kenneth K. [1 ]
Chao, Pane C. [1 ]
Diaz, Jose A. [1 ]
Yurovchak, Thomas [1 ]
Creamer, Carlton T. [1 ]
Sweetland, Scott [1 ]
Kallaher, Raymond L. [2 ]
McGray, Craig [2 ]
机构
[1] BAE Syst, Nashua, NH 03060 USA
[2] Modern Microsyst Inc, Silver Spring, MD 20904 USA
来源
2014 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC) | 2014年
关键词
GaN-on-diamond; high-electron-mobility transistor (HEMT); epitaxial transfer; substrate bonding; microwave power; thermal management;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the first demonstration of GaN-on-diamond RF power transistors produced by low-temperature substrate bonding technology. GaN high-electron-mobility transistors (HEMTs) are lifted from the original SiC substrate post fabrication and transferred onto high-quality polycrystalline diamond with thermal conductivity of 1,800 - 2,000 W/mK. Resulting GaN-on-diamond HEMTs demonstrated DC current density of 1.0A/mm, transconductance of 330mS/mm, and RF output power density of 6.0W/mm at 10GHz (CW). Finite-element thermal modeling indicates GaN-on-diamond technology based on low-temperature substrate bonding is capable of 3X increased power per area compared to conventional GaN-on-SiC devices.
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页数:4
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