Low-Temperature Substrate Bonding Technology for High Power GaN-on-Diamond HEMTs

被引：0

作者：

Chu, Kenneth K. ^{[1
]}

Chao, Pane C. ^{[1
]}

Diaz, Jose A. ^{[1
]}

Yurovchak, Thomas ^{[1
]}

Creamer, Carlton T. ^{[1
]}

Sweetland, Scott ^{[1
]}

Kallaher, Raymond L. ^{[2
]}

McGray, Craig ^{[2
]}

机构：

[1] BAE Syst, Nashua, NH 03060 USA

[2] Modern Microsyst Inc, Silver Spring, MD 20904 USA

来源：

2014 LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES (LEC) | 2014年

关键词：

GaN-on-diamond; high-electron-mobility transistor (HEMT); epitaxial transfer; substrate bonding; microwave power; thermal management;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first demonstration of GaN-on-diamond RF power transistors produced by low-temperature substrate bonding technology. GaN high-electron-mobility transistors (HEMTs) are lifted from the original SiC substrate post fabrication and transferred onto high-quality polycrystalline diamond with thermal conductivity of 1,800 - 2,000 W/mK. Resulting GaN-on-diamond HEMTs demonstrated DC current density of 1.0A/mm, transconductance of 330mS/mm, and RF output power density of 6.0W/mm at 10GHz (CW). Finite-element thermal modeling indicates GaN-on-diamond technology based on low-temperature substrate bonding is capable of 3X increased power per area compared to conventional GaN-on-SiC devices.

引用

页数：4

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