Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor

被引：30

作者：

Cardwell, D. W. ^{[1
]}

Arehart, A. R. ^{[2
]}

Poblenz, C. ^{[3
,4
]}

Pei, Y. ^{[3
,4
]}

Speck, J. S. ^{[3
,4
]}

Mishra, U. K. ^{[3
,4
]}

Ringel, S. A. ^{[2
]}

Pelz, J. P. ^{[1
]}

机构：

[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[3] Univ Calif Santa Barbara, Dept Mat Engn, Santa Barbara, CA 93106 USA

[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 19期

关键词：

HEMTS; PASSIVATION; MICROSCOPY; HFETS;

D O I：

10.1063/1.4714536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fast, bias-induced, surface potential transients (SPTs) and conductance transients (CTs) were simultaneously measured on an AlGaN/GaN high electron mobility transistor. SPTs measured near the drain-side gate edge and CTs have nearly the same shape and are well-fit with two exponentials having room-temperature time constants of 4.2 ms and 36 ms, likely indicating emission from two trap species. Kelvin probe force microscopy was used to measure SPTs. Electrostatic simulations of SPT amplitudes, which account for the measured probe/sample geometry, are consistent with a uniform trapped surface charge density of 7 x 10(12) electrons/cm(2) extending 200 nm from the drain-side gate edge. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714536]

引用

页数：4

共 11 条

[1] Next generation defect characterization in nitride HEMTs [J].