Degradation of organic light emitting diodes with cleaned ITO and MoO3 hole-injection layer

被引：2
|
作者：
Kishimoto, Tadashi [1 ]
Wako, Kazuhiro [1 ]
Matsuda, Kuniharu [2 ]
Iguchi, Hirofumi [2 ]
Tsuboi, Taiju [3 ]
机构：
[1] Res Inst Adv Liquid Crystal Technol, 1-4-43 Kita Inter Kogyodanchi, Hachinohe, Aomori 0392245, Japan
[2] Tohoku Device Co Ltd, Iwate 0250312, Japan
[3] Kyoto Sangyo Univ, Fac Engn, Kita ku, Kyoto 6038555, Japan
来源：
9TH INTERNATIONAL CONFERENCE ON NANO-MOLECULAR ELECTRONICS | 2011年 / 14卷
关键词：
OLEDs; degradation; HIL insertion; MoO3; ITO cleaning; DEVICES;
D O I：
10.1016/j.phpro.2011.05.048
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We study the effect of indium tin oxide (ITO) cleaning and hole-injection layer (HIL) insertion on performance of organic light emitting diodes (OLEDs) device, especially the degradation. We prepare higher- and lower-level cleaned ITOs and molybdenum oxide (MoO3) as HIL. OLED with higher-level cleaned ITO and without MoO3 gives the lower driving voltage, while a good stability in chromaticity and power efficiency is obtained from OLEDs with MoO3. The degradation of power efficiency is reduced in OLEDs with MoO3 and lower-level cleaned ITO. (C) 2010 Published by Elsevier B.V.
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页数：4
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