Some physical investigations on Ag2S thin films prepared by sequential thermal evaporation

被引:52
|
作者
Nasrallah, TB
Dlala, H
Amlouk, M
Belgacem, S
Bernède, JC
机构
[1] Fac Sci Tunis, Unite Phys Dispositifs Semicond, Tunis 2092, Tunisia
[2] Lab Phys Solides Electron, F-44322 Nantes, France
关键词
Ag2S thin films; thermal evaporation; optical properties; photovoltaic device;
D O I
10.1016/j.synthmet.2005.05.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ag2S thin films have been prepared on glass substrates by the sequential thermal evaporation technique. X-ray diffraction analysis shows that the films annealed at Ta = 250 degrees C in argon atmosphere are well crystallised in the beta-Ag2S phase with crystallinity preferentially oriented towards ((1) over bar 0 3) direction. Microprobe analysis shows that a nearly stoichiometric composition is obtained under such annealing temperature. The optical properties of the films are investigated using spectrophotometric measurements of transmittance T(lambda) and reflectance R(lambda) in the wavelength range 500-2000 nm. The refractive and absorption indexes, n and k, of Ag2S thin films are calculated from the values of the measured transmittance and reflectance. The study of the absorption coefficient of these films versus incident energy revealed that the value of the band gap energy is of the order of 1.1 eV. For the first time, a photovoltaic effect is reported using Ag2S as absorber. (C) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:225 / 230
页数:6
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