Spin transistor based on double tunnel junctions using half-metallic Co2MnSi electrodes

被引：6
|
作者：
Ohdaira, Yusuke [1 ]
Oogane, Mikihiko [1 ]
Naganuma, Hiroshi [1 ]
Ando, Yasuo [1 ]
机构：
[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan
来源：
INTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009) | 2010年 / 200卷
关键词：
D O I：
10.1088/1742-6596/200/5/052019
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Magnetic tunnel junctions (MTJs) using half-metallic Heusler alloy Co2MnSi electrodes show large tunnel magnetoresistance (TMR) ratio and large bias voltage dependence of tunnel conductance. We propose a spin transistor utilizing half-metallic characteristics of Co2MnSi. Fundamental structure is double tunnel junctions using Co2MnSi electrodes with gate electrode. The bias voltage dependence of tunnel conductance for the fabricated device has shown half-metallic characteristic of Co2MnSi electrodes. The TMR ratio has decreased with increasing gate voltage. This is the first observation of modulating the tunnel conductance by applying an external voltage in spin transistor using Co2MnSi.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Spin transistor using magnetic tunnel junctions with half-metallic Co2MnSi Heusler alloy electrodes
    Ohdaira, Y.
    Oogane, M.
    Naganuma, H.
    Ando, Y.
    APPLIED PHYSICS LETTERS, 2011, 99 (13)
  • [2] Spin dynamics of half-metallic Co2MnSi
    Buczek, P.
    Ernst, A.
    Sandratskii, L. M.
    INTERNATIONAL CONFERENCE ON MAGNETISM (ICM 2009), 2010, 200
  • [3] Half-metallic {Co2MnSi/Co2FeSi} multilayered Heusler electrodes in magnetic tunnel junctions
    Castrup, A.
    Dasgupta, S.
    Scherer, T.
    Rosner, H.
    Ellrich, J.
    Kruk, R.
    Ghafari, M.
    Hahn, H.
    Hutten, A.
    Ebke, D.
    Liu, N.-N.
    Ennen, I.
    Thomas, A.
    Schmalhorst, J.
    Reiss, G.
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 310 (02) : 2009 - 2011
  • [4] Temperature dependence of spin-dependent tunneling conductance of magnetic tunnel junctions with half-metallic Co2MnSi electrodes
    Hu, Bing
    Moges, Kidist
    Honda, Yusuke
    Liu, Hong-xi
    Uemura, Tetsuya
    Yamamoto, Masafumi
    Inoue, Jun-ichiro
    Shirai, Masafumi
    PHYSICAL REVIEW B, 2016, 94 (09)
  • [5] Half-metallic electronic structure of Co2MnSi electrodes in fully epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions investigated by tunneling spectroscopy (invited)
    Ishikawa, Takayuki
    Itabashi, Naoki
    Taira, Tomoyuki
    Matsuda, Ken-ichi
    Uemura, Tetsuya
    Yamamoto, Masafumi
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (07)
  • [6] Ferromagnetic Schottky junctions using half-metallic Co2MnSi/diamond heterostructures
    Ueda, K.
    Soumiya, T.
    Nishiwaki, M.
    Asano, H.
    APPLIED PHYSICS LETTERS, 2013, 103 (05)
  • [7] Large spin accumulation signal in half-metallic Co2MnSi based lateral spin valve devices
    Yang, Fujun
    Kang, Zewei
    Chen, Xiaoqin
    Xue, Yun
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (32)
  • [8] Influence of film composition in Co2MnSi electrodes on tunnel magnetoresistance characteristics of Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions
    Ishikawa, Takayuki
    Liu, Hong-xi
    Taira, Tomoyuki
    Matsuda, Ken-ichi
    Uemura, Tetsuya
    Yamamoto, Masafumi
    APPLIED PHYSICS LETTERS, 2009, 95 (23)
  • [9] Interfacial structure and half-metallic ferromagnetism in Co2MnSi-based magnetic tunnel junctions
    Telling, N. D.
    Keatley, P. S.
    van der Laan, G.
    Hicken, R. J.
    Arenholz, E.
    Sakuraba, Y.
    Oogane, M.
    Ando, Y.
    Miyazaki, T.
    PHYSICAL REVIEW B, 2006, 74 (22)
  • [10] Half-metallic band structure observed in Co2MnSi-based magnetic tunnel junctions
    Sakuraba, Y.
    Hattori, M.
    Oogane, M.
    Kubota, H.
    Ando, Y.
    Sakuma, A.
    Miyazaki, T.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (05) : 1221 - 1227
12345