Microwave characteristics of meander inductors fabricated by 3D self-assembly

被引：7
作者：
Dahlmann, GW
Yeatman, EM
机构：
来源：
8TH IEEE INTERNATIONAL SYMPOSIUM ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2000年
关键词：
D O I：
10.1109/EDMO.2000.919045
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new self-assembly process is presented which allows the fabrication of 3-dimensional metal structures in a fully parallel low temperature process. The fabrication method is suitable as a postprocess so as to integrate inductors on radio- and microwave frequency ICs, with the aim of reducing losses and parasitic capacitance by separating the coil from the substrate. Meandered microwave inductors have been fabricated on a low resistivity silicon substrate, and a peak Q of 11 was measured for a 2 nH inductor, compared to a peak Q of 4 for the same structure in proximity to the substrate.
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页码：128 / 133
页数：6
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