Fabrication and performance of N-doped ZnO UV photoconductive detector

被引：87

作者：

Shinde, S. S. ^{[1
]}

Rajpure, K. Y. ^{[1
]}

机构：

[1] Shivaji Univ, Dept Phys, Electrochem Mat Lab, Kolhapur 416004, Maharashtra, India

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2012年 / 522卷

关键词：

Spray pyrolysis; Ultraviolet photodetector; N:ZnO; Alumina; ZnO buffer layer; RAY PHOTOELECTRON-SPECTROSCOPY; ULTRAVIOLET PHOTODETECTORS; FILMS;

D O I：

10.1016/j.jallcom.2012.01.118

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report study on the fabrication and characterization of an ultraviolet (UV) photodetectors based on N-doped ZnO films. The N-doped ZnO films with 10 at% N doping are spray deposited on to alumina substrates. The photoconductive UV detector based on N-doped ZnO thin films, having a metal-semiconductor-metal (MSM) configuration are fabricated using Al as a contact metal. The dependence of I-V characteristic under dark and illumination, spectral and transient photoresponse of the detector are investigated. The linear current-voltage (I-V) characteristics under forward bias exhibit ohmic metal-semiconductor contact. The UV photoconductive effect is observed showing fast response with switching on/off UV light illumination. The neutralization of photogenerated holes by negatively charged oxygen ion plays a key role in the photoconductive characteristics of N-doped ZnO polycrystalline films. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：118 / 122

页数：5

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