High thermoelectric figure of merit in the Cu3SbSe4-Cu3SbS4 solid solution

被引：157

作者：

Skoug, Eric J. ^{[1
]}

Cain, Jeffrey D. ^{[1
]}

Morelli, Donald T. ^{[1
]}

机构：

[1] Michigan State Univ, Dept Chem Engn & Mat Sci, E Lansing, MI 48824 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 26期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.3605246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report thermoelectric properties of selected compounds from the Cu3SbSe4-Cu3SbS4 system. Additional phonon scattering due to the disordered arrangement of Se and S atoms reduces the lattice thermal conductivity to near its minimum possible value at high temperature. The hole concentration is optimized at approximately 2.0 x 10(20) cm(-3) by doping with 3% Ge on the Sb site. Compounds of the form Cu3Sb1-yGeySe4-xSx (x = 0.8 and 1.2, y = 0.02 and 0.03) all have dimensionless thermoelectric figure of merit in excess of 0.8 at 650 K, with a maximum value of 0.89 for x = 1.2, y = 0.03. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3605246]

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