Fe-based amorphous thin films as sensing element for miniaturized magnetostrictive delay line arrangement

被引:0
|
作者
Chiriac, H [1 ]
Pletea, M [1 ]
Hristoforou, E [1 ]
机构
[1] Natl Inst Res & Dev Tech Phys, Iasi 6600 3, Romania
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A miniaturized arrangement based on magnetostrictive delay line (MDL) mechanism, able to be used as sensor, is realized using thin films technology. In order to obtain high-performance miniaturized magnetostrictive delay line arrangement we used Fe70B20Si6C4 amorphous thin films as magnetostrictive sensing element because of their better magnetic and magnetoelastic characteristics than conventional magnetostrictive thin films. A monolithic design has been achieved with the electric equipment and sensing element contained onto the same silicon substrate.
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页码:979 / 982
页数:4
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