Effect of As/In-flux on the growth of InAs nanowire by molecular beam epitaxy

Au-assisted growth of InAs nanowire by molecular beam epitaxy is highly governed by the surface diffusion kinetics on the surface and the sidewalls of the growing nanowire. In this paper, we discuss the effects of growth temperature, As/In flux ratio, substrate orientation on the growth of InAs nanowire by MBE technique and their influence on the length, growth rate and density of the obtained nanowires. The obtained results show that while increasing V/III ratio, the density and length of the grown nanowires increases. Also it has been found that the growth rate of the nanowires has been improved remarkably at higher V/III ratios. Moreover, the thickness of nanowire is found to decrease with increasing V/III ratio. (C) 2010 Elsevier B.V. All rights reserved.