Role of Ba in engineering band gap, photoluminescence and nonlinear optical properties of SnO2 nanostructures for photovoltaic and photocatalytic applications

被引：27

作者：

Bannur, M. S. ^{[1
]}

Antony, Albin ^{[2
]}

Maddani, K. I. ^{[3
]}

Poornesh, P. ^{[2
]}

Manjunatha, K. B. ^{[4
]}

Kulkarni, Suresh D. ^{[5
]}

Choudhari, K. S. ^{[5
]}

机构：

[1] Vishwanathrao Deshpande Inst Technol, Karnataka Law Soc, Dept Phys, Haliyal, Karnataka, India

[2] Manipal Acad Higher Educ, Dept Phys, Manipal Inst Technol, Manipal 576104, Karnataka, India

[3] Sri Dharmasthala Manjunatheshwar Coll Engn & Tech, Dept Phys, Dharwad 580004, Karnataka, India

[4] NMAM Inst Technol, Dept Phys, Nitte 574110, India

[5] Manipal Acad Higher Educ, Dept Atom & Mol Phys, Manipal 576104, Karnataka, India

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2018年 / 122卷

关键词：

Ba; SnO2; nanostructures; Non-linear optical properties (NLO); Photoluminescence (PL); Z-scan; ZNO THIN-FILMS; LUMINESCENCE PROPERTIES; SENSITIVITY; AL;

D O I：

10.1016/j.spmi.2018.08.012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In this article, we present the role of Ba doping in tuning energy gap, photoluminescence (PL) and third-order optical nonlinearity chi((3)) of SnO2 nanostructures. Surface morphology analysis indicates the fragmentation of larger grains upon Ba incorporation possibly caused by the lattice mismatch effects. X-ray diffraction reveals polycrystalline nature of the nanostructures with rutile tetragonal structure. A shift in preferential growth orientation plane (200, 211, 110) has been observed with increase in Ba concentration. PL spectroscopy studies confirms the crystallinity of the films ruling out the presence of Sn interstitials. The green luminescent center at 550 nm and trap emission at 578 nm are attributed to singly ionized charge state of the oxygen and defect levels in band gap. Relatively large change in the band gap (3.64 eV - 3.13 eV) arises due to Ba doping points the credibility of SnO2 thin films for use in photovoltaic and photo catalytic applications. Third-optical nonlinearity of the films investigated by Z-scan technique shows chi((3)) as high as 3.37 x 10(-3) esu indicating the suitability of SnO2 nanostructures in non-linear optical (NLO) devices such as optical power limiters and switches.

引用

页码：156 / 164

页数：9

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