High temperature assessment of nitride-based devices

被引：8

作者：

Cuerdo, R. ^{[1
,2
]}

Pedros, J. ^{[1
,2
]}

Navarro, A. ^{[1
,2
]}

Brana, A. F. ^{[1
,2
]}

Pau, J. L. ^{[1
,2
]}

Munoz, E. ^{[1
,2
]}

Calle, F. ^{[1
,2
]}

机构：

[1] Univ Politecn Madrid, ETSI Telecomunicac, Inst Sistemas Optoelect & Microtecnol, E-28040 Madrid, Spain

[2] Univ Politecn Madrid, ETSI Telecomunicac, Dpto Ingn Electron, E-28040 Madrid, Spain

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2008年 / 19卷 / 02期

关键词：

Surface Acoustic Wave; High Electron Mobility Transistor; Polar Optical Phonon; Transmission Line Method; Rayleigh Mode;

D O I：

10.1007/s10854-007-9298-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high temperature characterization of GaN-based devices, including high electron mobility transistors (HEMTs), p-i-n photodiodes and surface acoustic wave (SAW) filters is reported. Transmission line method (TLM) measurements reveal the reversible behaviour of both the ohmic contact resistance and the two-dimensional electron gas (2DEG) mobility. AlGaN/GaN HEMTs on sapphire and SiC substrates present a reduction of the drain current and the transconductance as temperature increases. The responsivity of InGaN/GaN photodiodes is enhanced and shifted to larger wavelengths with temperature, recovering its original value after the thermal cycle. The temperature coefficient of frequency of SAW filters on AlN epilayers on different substrates has been measured. The influence of temperature on the different surface acoustic modes is compared.

引用

页码：189 / 193

页数：5

共 5 条

[1] High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates [J].