Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors

被引：8

作者：

Baranovskii, S. D. ^{[1
,2
]}

Nenashev, A., V ^{[3
,4
]}

Oelerich, J. O. ^{[1
,2
]}

Greiner, S. H. M. ^{[1
,2
]}

Dvurechenskii, A., V ^{[3
,4
]}

Gebhard, F. ^{[1
,2
]}

机构：

[1] Philipps Univ, Dept Phys, D-35032 Marburg, Germany

[2] Philipps Univ, Mat Sci Ctr, D-35032 Marburg, Germany

[3] Inst Semicond Phys, Novosibirsk 630090, Russia

[4] Novosibirsk State Univ, Novosibirsk 630090, Russia

来源：

EPL | 2019年 / 127卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

CONDUCTIVITY;

D O I：

10.1209/0295-5075/127/57004

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies in the framework of this approach neglected so far the percolation nature of the phenomenon. In this article, a recipe for theoretical description of charge transport in the RB model is formulated using percolation arguments. Comparison with the results published so far evidences the superiority of the percolation approach. Copyright (C) EPLA, 2019

引用

页数：5

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