Carrier recombination in clusters of NiO

被引:57
作者
Volkov, VV [1 ]
Wang, ZL
Zou, BS
机构
[1] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
D O I
10.1016/S0009-2614(01)00191-9
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We studied the dependence of carrier recombination pathways in nanoparticles of NiO on surface conditions. Two types of 0.6 nm short-range order clusters of NiO were prepared in reverse micelles of dodecyl benzene sulfonate. The steady-state absorption and time-resolved fluorescence measurements were done in order to investigate the photophysical properties of d-d in-gap transitions. The NiO nanoclusters and bulk steady-state optical absorption and emission properties are comparatively discussed from the prospective of Laporte's rules relaxation. The results of the time-resolved emission studies allowed us to develop the phenomenological model of the in-gap carrier recombination in NiO clusters. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:117 / 124
页数:8
相关论文
共 30 条
[1]   First-principles calculations of the electronic structure and spectra of strongly correlated systems: The LDA+U method [J].
Anisimov, VI ;
Aryasetiawan, F ;
Lichtenstein, AI .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1997, 9 (04) :767-808
[2]  
DEBOER JH, 1937, P PHYS SOC LONDON S, V49, P59, DOI DOI 10.1088/0959-5309/49/4S/307
[3]  
DiazGuerra C, 1997, PHYS STATUS SOLIDI A, V163, P497, DOI 10.1002/1521-396X(199710)163:2<497::AID-PSSA497>3.0.CO
[4]  
2-Z
[5]   ELECTRONIC SURFACE-STATES OF NIO (100) [J].
FREITAG, A ;
STAEMMLER, V ;
CAPPUS, D ;
VENTRICE, CA ;
SHAMERY, KA ;
KUHLENBECK, H ;
FREUND, HJ .
CHEMICAL PHYSICS LETTERS, 1993, 210 (1-3) :10-14
[6]   MULTIELECTRON SATELLITES AND SPIN POLARIZATION IN PHOTOEMISSION FROM NI COMPOUNDS [J].
FUJIMORI, A ;
MINAMI, F ;
SUGANO, S .
PHYSICAL REVIEW B, 1984, 29 (09) :5225-5227
[7]   VALENCE-BAND PHOTOEMISSION AND OPTICAL-ABSORPTION IN NICKEL COMPOUNDS [J].
FUJIMORI, A ;
MINAMI, F .
PHYSICAL REVIEW B, 1984, 30 (02) :957-971