Variable-range-hopping conductivity of the half-doped bilayer manganite LaSr2Mn2O7 -: art. no. 064405

被引：30

作者：

Chen, XJ ^{[1
]}

Zhang, CL

Gardner, JS

Sarrao, JL

Almasan, CC

机构：

[1] Kent State Univ, Dept Phys, Kent, OH 44242 USA

[2] Brookhaven Natl Lab, Dept Phys, Upton, NY 11973 USA

[3] Natl Inst Stand & Technol, NIST Ctr Neutron Res, Gaithersburg, MD 20899 USA

[4] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW B | 2003年 / 68卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevB.68.064405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report measurements of the in-plane (rho(ab)) and out-of-plane (rho(c)) resistivities on a single crystal of the half-doped bilayer manganite LaSr2Mn2O7. In the temperature T range 220 to 300 K, the resistive anisotropy rho(c)/rho(ab)=A+B/T (A and B constants), which provides evidence for the variable-range-hopping conduction in the presence of a Coulomb gap. This hopping mechanism also accounts for the quadratic magnetic field H and sin(2)Phi dependences of the negative magnetoresistivity ln[rho(i)(T,H,Phi)/rho(i)(T,H=0)] (i=ab,c), where Phi is the in-plane angle between the magnetic field and the current.

引用

页数：5

共 28 条

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ALTSHULER BL, 1982, JETP LETT+, V36, P195

[2] HOPPING CONDUCTIVITY IN DISORDERED SYSTEMS [J].