Bilayer films of La0.7Sr0.3MnO3/LaFeO3 (LSMO/LFO) were grown on (001) orientated LaAlO3 substrate for different thickness of LSMO layer by using RF magnetron sputtering. The analysis of X-ray diffraction patterns show the growth of both films along (001) direction and the out-of-plane lattice constant of LSMO film decreases with increase in film thickness. Both films are found to undergo out-of-plane tensile strain and the lattice strain is found to decrease with increase in film thickness. The temperature variation of magnetisation measurements show that all films exhibit ferromagnetic transition with transition temperature in the range of 290 K for 30 nm thick film to 332 K for 200 nm film. M-H loops recorded at 50 K show a systematic increase in saturation magnetisation with increase in film thickness. The electron magnetic resonance spectra recorded at room temperature and at 77 K show the presence of ferromagnetic resonance peak. The resonance peak becomes sharper and shifts towards lower field as the film thickness is increased. The resonance spectra recorded with magnetic field applied perpendicular to the plane of the film show an additional peak due to lattice strain and surface pinning of spins. (C) 2017 Elsevier B.V. All rights reserved.
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Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Xiao Ling
Chen Ying
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Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Chen Ying
Liu Zhen
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Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Liu Zhen
Wang Gen-Shui
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Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Wang Gen-Shui
Wen Zhi-Yu
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Chongqing Univ, Microsyst Ctr, Chongqing 400030, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
Wen Zhi-Yu
Dong Xian-Lin
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Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R ChinaChinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
机构:
Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USACornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
Adamo, C.
Ke, X.
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Penn State Univ, Dept Phys, University Pk, PA 16802 USA
Penn State Univ, Mat Res Inst, University Pk, PA 16802 USACornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
Ke, X.
Wang, H. Q.
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Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USACornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
Wang, H. Q.
Xin, H. L.
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Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USACornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
Xin, H. L.
Heeg, T.
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Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USACornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
Heeg, T.
Hawley, M. E.
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Los Alamos Natl Lab, Mat Sci & Technol Div MST 8, Los Alamos, NM 87545 USACornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
Hawley, M. E.
Zander, W.
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Forschungszentrum Julich, Inst Bio & Nanosyst IBN1 IT, D-52425 Julich, Germany
Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, GermanyCornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
Zander, W.
Schubert, J.
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Forschungszentrum Julich, Inst Bio & Nanosyst IBN1 IT, D-52425 Julich, Germany
Forschungszentrum Julich, JARA Fundamentals Future Informat Technol, D-52425 Julich, GermanyCornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
Schubert, J.
Schiffer, P.
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Penn State Univ, Dept Phys, University Pk, PA 16802 USA
Penn State Univ, Mat Res Inst, University Pk, PA 16802 USACornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
Schiffer, P.
Muller, D. A.
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Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USACornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
Muller, D. A.
Maritato, L.
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Univ Salerno, Dipartimento Matemat & Informat, I-84081 Baronissi, SA, Italy
CNR INFM Salerno, I-84081 Baronissi, SA, ItalyCornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
Maritato, L.
Schlom, D. G.
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Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USACornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA